general description features the HT3401 uses advanced trench tec hnology to v ds (v)=-30v provide excellent rds(on),low gate change and i d =-4.2a(v gs =-10v) operation with gate voltages as low as 2.5v.this r ds(on) <50m (v gs =-10v) device is suitable for use as a load switch or in pwm r ds ( on )<65m (v gs =-4.5v) applications. standard product HT3401 is pb-free r ds ( on ) <120m (v gs =-2.5v) (meets rohs & sony 25 9 specifications). absolute maximum ratings (ta=25c unless otherwise noted) parameter symbol maximum units drain-source voltage v ds -30 v gate-source voltage v gs + 12 v continuous drain current (a) ta=25c id -4.2 a ta=70c -3.5 junction and storage temperature range i dm -3.0 power dissipation (a) ta=25c p d 1.4 w ta=70c 1 junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics parameter symbol typ max units maximum junction-to-ambient(a) t 10s r ja 65 90 c/w maximum junction-to-ambient(a) steady-state 85 125 c/w maximum junction-to-lead(c) steady-state r jl 43 60 c/w HT3401 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (tj=25c unless otherwise noted) symbol parameter conditions min typ max units static parameters bv dss drain-source breakdown voltage id=-250a, vgs=0v -30 v idss zero gate voltage drain current vds=-24v,vgs=0v -1 a tj=55 -5 igss gate-body leakage current vds=0v, vgs=12v 100 na v gs(th) gate threshold voltage vds=vgs id=-250a -0.7 -1 -1.3 v id(on) on state drain current vgs=-4.5v, vds=-5v -25 a rds(on) static drain-source on-resistance vgs=-10v, id=-4.2a 42 50 m ? tj=125c 75 vgs=-4.5v, id=-4a 53 65 m ? vgs=-2.5v, id=-1a 80 120 m ? g fs forward transconductance vds=-5v, id=-5a 7 11 s v sd diode forward voltage is=-1a,vgs=0v -0.75 -1 v is maximum body-diode continuous current -2.2 a i sm pulsed body-diode current b -30 a dynamic parameters c iss input capacitance vgs=0v, vds=-15v, f=1mhz 954 pf c oss output capacitance 115 pf c rss reverse transfer capacitance 77 pf r g gate resistance vgs=0v, vds=0v, f=1mhz 6 ? switching parameters qg total gate charge vgs=4.5v, vds=-15v, id=-4a 9.4 nc qgs gate source charge 2 nc qgd gate drain charge 3 nc td(on) turn-on delaytime vgs=-10v,vds=-15v, rl=3.6 ? , rgen=6 ? 6.3 nc tr turn-on rise time 3.2 ns td(off) turn-off delaytime 38.2 ns tf turn-off fall time 12 ns trr body diode reverse recovery time if=-4a, di/dt=100a/s 20.2 ns qrr body diode reverse recovery charge if=-4a, di/dt=100a/s 11.2 nc HT3401 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
a: the value of r ja is measured with t he device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depen ds on the user's specif ic board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in fi gures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still ai r environment with t a=25c. the soa curve provides a single pulse rating. typical electrical and thermal characteristics HT3401 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristics HT3401 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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